A Novel n-Type Conjugated Polymer DOCN-PPV: Synthesis, Optical, and Electrochemical Properties

Macromolecules, 2006, 39 (26), pp 8889–8891

A Highly Conjugated p- and n-Type Polythiophenoazomethine: Synthesis, Spectroscopic, and Electrochemical Investigation

Macromolecules, 2007, 40 (6), pp 1792–1795

An Ambipolar Peryleneamidine Monoimide-Fused Polythiophene with Narrow Band Gap

The donor−acceptor system can be electropolymerized to generate a functionalized polythiophene with a band gap of 0.9 eV and with ambipolar characteristics showing high electroactivity in both the p- and the n-doping process.

Org. Lett., 2007, 9 (11), pp 2171–2174

Synthesis and Characterization of Electron-Deficient and Highly Soluble (Bis)Indenofluorene Building Blocks for n-Type Semiconducting Polymers

These derivatives exhibit optical band gaps of 1.83 to 2.44 eV and low LUMO energies of −3.24 to −4.30 eV, representing a promising new building block class for n-type polymeric electronic materials.

Org. Lett., 2008, 10 (7), pp 1385–1388

Synthesis and Absorption Spectra of n-Type Conjugated Polymers Based on Perylene Diimide

The onset reduction (n-doping) potentials of PDIV and PDITh are at -0.62 V and -0.66 V versus Ag/Ag⁺ respectively, which correspond to the electron affinities (EAs) of 4.09 eV for PDIV and 4.05 eV for PDITh.

Macromolecular Rapid Communications Volume 29 Issue 17, Pages 1444 - 1448

Low-Bandgap Pyrazine Polymers: Ladder-Type Connectivity by Intramolecular S···N(sp2) Interactions and Hydrogen Bonds

Macromolecules, 2009, 42 (7), pp 2309–2312

Design, Synthesis, and Characterization of Ladder-Type Molecules and Polymers. Air-Stable, Solution-Processable n-Channel and Ambipolar Semiconductors

The onset LUMO energy for carrier electron stabilization is estimated as −4.0 to −4.1 eV, indicating an overpotential of 0.9−1.0 eV.

J. Am. Chem. Soc., 2009, 131 (15), pp 5586–5608